The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Dec. 17, 2021
Applicant:

United Microelectronics Corporation, Hsinchu, TW;

Inventors:

Kun-Ju Li, Tainan, TW;

Ang Chan, Taipei, TW;

Hsin-Jung Liu, Pingtung County, TW;

Wei-Xin Gao, Tainan, TW;

Jhih-Yuan Chen, Kaohsiung, TW;

Chun-Han Chen, Hsinchu, TW;

Zong-Sian Wu, Tainan, TW;

Chau-Chung Hou, Tainan, TW;

I-Ming Lai, Tainan, TW;

Fu-Shou Tsai, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/47 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/47 (2013.01); H01L 21/76237 (2013.01); H01L 21/76251 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.


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