The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

May. 27, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventor:

Changyok Park, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/35 (2006.01); H01L 23/522 (2006.01); H01L 27/08 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 4/35 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 27/0805 (2013.01); H01L 28/60 (2013.01);
Abstract

Disclosed herein are IC structures with one or more decoupling capacitors based on dummy TSVs provided in a support structure. An example decoupling capacitor includes first and second capacitor electrodes and a capacitor insulator between them. The first capacitor electrode is a liner of a first electrically conductive material on sidewalls and a bottom of an opening in the support structure, the opening in the support structure extending from the first side towards, but not reaching, the second side. The capacitor insulator is a liner of a dielectric material on sidewalls and a bottom of the opening in the support structure lined with the first electrically conductive material. The second capacitor electrode is a second electrically conductive material filling at least a portion of the opening in the support structure lined with the first electrically conductive material and with the dielectric material.


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