The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Jan. 20, 2022
Micron Technology, Inc., Boise, ID (US);
Murong Lang, San Jose, CA (US);
Zhenming Zhou, San Jose, CA (US);
Jian Huang, Union City, CA (US);
Tingjun Xie, Milpitas, CA (US);
Jiangli Zhu, San Jose, CA (US);
Nagendra Prasad Ganesh Rao, Folsom, CA (US);
Sead Zildzic, Rancho Cordova, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A programming operation is performed on a first set of memory cells addressable by a first wordline (WL), wherein the first set of memory cells are comprised by an open translation unit (TU) of memory cells. It is determined that a second set of memory cells comprised by the open TU are in a coarse programming state, wherein the second set of memory cells is addressable by a second WL. In response to determining that the second set of memory cells satisfies a threshold criterion, a programming state verify level associated with the second WL is reduced by a verify level offset. A programming state gate step size associated with each WL of the open TU is reduced by a predefined value. A programming operation is performed on the second set of memory cells using the reduced programming state verify level and the reduced programming state gate step size.