The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
May. 20, 2022
Micron Technology, Inc., Boise, ID (US);
Alberto Sassara, Naples, IT;
Giuseppe D'Eliseo, Caserta, IT;
Lalla Fatima Drissi, Ottaviano, IT;
Luigi Esposito, Piano di Sorrento, IT;
Paolo Papa, Naples, IT;
Salvatore Del Prete, Grumo Nevano, IT;
Xiangang Luo, Fremont, CA (US);
Xiaolai Zhu, Shanghai, CN;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.