The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Jan. 11, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Wei Su, Taoyuan, TW;
Fu-Ting Yen, Hsinchu, TW;
Ting-Ting Chen, New Taipei, TW;
Teng-Chun Tsai, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/3205 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/0206 (2013.01); H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/28079 (2013.01); H01L 21/28556 (2013.01); H01L 21/3105 (2013.01); H01L 21/31058 (2013.01); H01L 21/31116 (2013.01); H01L 21/321 (2013.01); H01L 21/32051 (2013.01); H01L 21/32135 (2013.01); H01L 29/6656 (2013.01); H01L 21/32 (2013.01); H01L 29/66795 (2013.01);
Abstract
A device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, source/drain structures over the substrate and on opposite sides of the gate structure, and a self-assemble monolayer (SAM) in contact with an inner sidewall of one of the gate spacer and in contact with a top surface of the gate structure.