The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Dec. 28, 2021
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventors:

Priyal Shah, Santa Clara, CA (US);

Rahul Agarwal, Santa Clara, CA (US);

Raja Swaminathan, Austin, TX (US);

Brett P. Wilkerson, Austin, TX (US);

Assignee:

ADVANCED MICRO DEVICES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 20/02 (2006.01); B23K 20/24 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); B23K 103/00 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 20/02 (2013.01); B23K 20/24 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); H01L 25/0657 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/8003 (2013.01); H01L 2224/80031 (2013.01); H01L 2224/80048 (2013.01); H01L 2224/80051 (2013.01); H01L 2224/80097 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80345 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract

A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.


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