The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Jun. 21, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Brandon P. Wirz, Boise, ID (US);

Jaekyu Song, Boise, ID (US);

Sui Chi Huang, Taichung, TW;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/50 (2006.01); H01L 21/60 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 21/50 (2013.01); H01L 21/67098 (2013.01); H01L 2021/60195 (2013.01); H01L 2224/75251 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/94 (2013.01);
Abstract

Systems and methods for controlling contamination during thermocompression bonding are provided herein. The tool generally includes a bondhead having a first channel extending in a lateral direction from a first port along a second side toward a perimeter of the bondhead. In several examples, the bondhead includes a second channel fluidly coupled to a second port and extending in a lateral direction along an inset surface of the bondhead, where the second channel at least partially surrounds the first channel. In other examples, the tool includes a vacuum manifold having a vacuum opening positioned laterally outward from the bondhead. A first flow unit is coupled to the first channel and is configured to withdraw air. A second flow unit is coupled to the second port or the manifold to withdraw fluid and prevent outgassing bonding materials from entering the first channel, depositing on the bondhead, and/or contaminating neighboring semiconductor components.


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