The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Jan. 06, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Benjamin Stassen Cook, Addison, TX (US);

Nazila Dadvand, Richardson, TX (US);

Sreenivasan Koduri, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49513 (2013.01); H01L 21/4871 (2013.01); H01L 23/49503 (2013.01); H01L 23/49548 (2013.01); H01L 23/49568 (2013.01); H01L 23/49582 (2013.01); H01L 2224/32245 (2013.01);
Abstract

A semiconductor device includes a metal substrate including a through-hole aperture having a multi-size cavity including a larger area first cavity portion above a smaller area second cavity portion that defines a first ring around the second cavity portion, where the first cavity portion is sized with area dimensions to receive a semiconductor die having a top side with circuitry coupled to bond pads thereon and a back side with a metal (BSM) layer thereon. The semiconductor die is mounted top side up with the BSM layer on the first ring. A metal die attach layer directly contacts the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.


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