The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Feb. 25, 2021
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Hiroto Igawa, Toyama, JP;

Masanori Nakayama, Toyama, JP;

Katsunori Funaki, Toyama, JP;

Tatsushi Ueda, Toyama, JP;

Yasutoshi Tsubota, Toyama, JP;

Eiko Takami, Toyama, JP;

Yuichiro Takeshima, Toyama, JP;

Yuki Yamakado, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 8/12 (2006.01); C23C 8/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); C23C 8/12 (2013.01); C23C 8/36 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01J 2237/332 (2013.01);
Abstract

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.


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