The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Feb. 25, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jhy-Jyi Sze, Hsin-Chu, TW;
Sin-Yi Jiang, Hsinchu, TW;
Yi-Shin Chu, Hsinchu, TW;
Yin-Kai Liao, Taipei, TW;
Hsiang-Lin Chen, Hsinchu, TW;
Kuan-Chieh Huang, Hsinchu, TW;
Jung-I Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material generates electrical signals from radiation within a second range of wavelengths, the second range is different from first range, a transparent layer proximal to a light receiving surface of the image sensor element, wherein the transparent layer is transparent to radiation within the second range of wavelength, and an interconnect structure connected to a signal transmitting surface of the image sensor element.