The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jun. 13, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Inventors:
Kuo-Hung Lee, Taipei, TW;
Chih-Fei Lee, Tainan, TW;
Fu-Cheng Chang, Tainan, TW;
Ching-Hung Kao, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/78 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 29/00 (2006.01); H01L 21/02 (2006.01); H10B 12/00 (2023.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/78 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 28/40 (2013.01); H01L 21/02063 (2013.01); H01L 21/31144 (2013.01); H01L 28/60 (2013.01); H01L 28/90 (2013.01); H01L 28/91 (2013.01); H01L 29/00 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H10B 12/37 (2023.02);
Abstract
A method of fabricating a semiconductor structure includes forming an alignment mark layer on a substrate; patterning the alignment mark layer for forming at least one alignment mark feature; forming a bottom conductive layer on the patterned alignment mark layer in a substantially conformal manner; forming an insulator layer on the bottom conductive layer; and forming a top conductive layer on the insulator layer.