The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jun. 30, 2020
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Hiroto Otake, Tokyo, JP;

Takashi Hattori, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/32 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); H01J 37/3244 (2013.01); H01J 37/32724 (2013.01); H01J 37/32834 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/334 (2013.01);
Abstract

To provide an etching processing method and an etching processing apparatus which allow an aluminum oxide film to be etched with high accuracy and with a high selectivity to each of a silicon oxide film and a silicon nitride film, the etching processing method includes the step of placing, in a processing chamber, a wafer having the aluminum oxide film disposed on an upper surface thereof, maintaining the wafer at a temperature of −20° C. or less, and supplying vapor of hydrogen fluoride from a plurality of through holes in a plate-like member disposed above the upper surface of the wafer with a predetermined gap being provided therebetween only for a predetermined period to etch the aluminum oxide film.


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