The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Feb. 22, 2022
International Business Machines Corporation, Armonk, NY (US);
Heng Wu, Santa Clara, CA (US);
Dechao Guo, Niskayuna, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
Lan Yu, Voorheesville, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Adra Carr, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques are provided to fabricate semiconductor devices having a nanosheet field-effect transistor device disposed on a semiconductor substrate. The nanosheet field-effect transistor device includes a nanosheet stack structure including a semiconductor channel layer and a source/drain region in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure. A trench formed in the source/drain region is filled with a metal-based material. The metal-based material filling the trench in the source/drain region mitigates the effect of source/drain material overfill on the contact resistance of the semiconductor device.