The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
May. 26, 2022
Micron Technology, Inc., Boise, ID (US);
Karthik Sarpatwari, Boise, ID (US);
Xuan-Anh Tran, Boise, ID (US);
Jessica Chen, Boise, ID (US);
Jason A. Durand, Boise, ID (US);
Nevil N. Gajera, Meridian, ID (US);
Yen Chun Lee, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for accessing a multi-level memory cell are described. The memory device may perform a read operation that includes pre-read portion and a read portion to access the multi-level memory cell. During the pre-read portion, the memory device may apply a plurality of voltages to a plurality of memory cells to identify a likely distribution of memory cells storing a first logic state. During the read portion, the memory device may apply a first read voltage to a memory cell based on performing the pre-read portion. The memory device may apply a second read voltage to the memory cell during the read portion that is based on the first read voltage. The memory device may determine the logic state stored by the memory cell based on applying the first read voltage and the second read voltage.