The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Nov. 05, 2021
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Rui Pan, Shanghai, CN;
Jionghan Ye, Shanghai, CN;
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai, CN;
Abstract
The present application discloses a capacitor integrated in a FinFET. The capacitor and a resistor are both integrated in a middle-end-of-line process layer. A resistor main body layer and a resistor cover layer of the resistor and the forming regions of the intermediate dielectric layer and the lower electrode plate of the capacitor are patterned in a lithography process applying a first photomask; a forming region of an upper electrode plate is patterned in another lithography process applying a second photomask; the lower electrode plate, the upper electrode plate and the resistor main body layer are respectively connected with a metal zeroth layer. The present application further discloses a method for fabricating a capacitor integrated in a FinFET device. The disclosed method can reduce the process cost and improve the process efficiency, as well as flexibly select the capacitance of the capacitor by the process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile