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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11887856 B1

PDFFull Text
Date of Patent:
Jan. 30, 2024

Filed:

Jun. 14, 2021

Enhanced spatial ald of metals through controlled precursor mixing

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kelvin Chan, San Ramon, CA (US);

Yihong Chen, San Jose, CA (US);

Jared Ahmad Lee, San Jose, CA (US);

Kevin Griffin, Livermore, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Joseph Yudovsky, Campbell, CA (US);

Mandyam Sriram, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Servilla Whitney LLC

Primary Examiner:

Kelly M Gambetta

Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/3205 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); C23C 16/14 (2006.01); C23C 16/452 (2006.01); C23C 16/458 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28562 (2013.01); C23C 16/06 (2013.01); C23C 16/14 (2013.01); C23C 16/452 (2013.01); C23C 16/4557 (2013.01); C23C 16/4584 (2013.01); C23C 16/45525 (2013.01); C23C 16/45534 (2013.01); C23C 16/45551 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28506 (2013.01); H01L 21/32051 (2013.01); H01L 21/76877 (2013.01);
Abstract

Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Find Patent Forward Citations

Chan, Kelvin. (2024). Enhanced spatial ald of metals through controlled precursor mixing (U.S. Patent No. 11887856). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11887856

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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