The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Dec. 12, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Michael A. Smith, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/40 (2006.01); H01L 21/266 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 21/266 (2013.01); H01L 21/823412 (2013.01); H01L 27/088 (2013.01); H01L 29/402 (2013.01); H01L 29/66492 (2013.01);
Abstract

An apparatus includes a substrate and a transistor disposed on the substrate. The transistor includes a source and a source contact disposed on the source. The transistor also includes a drain and a drain contact disposed on the drain. A gate is disposed between the source contact and the drain contact, and a screened region is disposed adjacent the source contact or the drain contact. The screened region corresponds to a lightly doped region. The screened region includes an implant screen configured to reduce an effective dose in the screened region so as to shift an acceptable dose range of the screened region to a higher dose range. The acceptable dose range corresponds to acceptable breakdown voltage values for the screened region.


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