The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Jul. 01, 2020
Applicant:
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Inventor:
Anbang Zhang, Zhuhai, CN;
Assignee:
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/48 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 23/481 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
An electronic device includes a substrate, a transistor and a doped well. The substrate includes a first region and a second region different from the first region. The transistor is disposed on the first region of the substrate. The transistor includes a first nitride semiconductor layer disposed on the substrate, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer. The second nitride semiconductor layer has a bandgap greater than that of the first nitride semiconductor layer. The doped well is disposed in the second region.