The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Oct. 01, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H10B 12/00 (2023.01); H10B 41/42 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76229 (2013.01); H10B 12/09 (2023.02); H10B 41/42 (2023.02);
Abstract
A semiconductor structure manufacturing method includes: a substrate is provided, and a trench structure is formed in the substrate; a first dielectric layer is formed in the trench structure, and a top surface of the first dielectric layer is lower than a top surface of the trench structure; and a protective layer is formed in the trench structure, and the protective layers at least covers a surface of the first dielectric layer and part of a side wall of the trench structure.