The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Nov. 10, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yasutaka Hama, Miyagi, JP;

Motoki Noro, Miyagi, JP;

Shu Kino, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01J 37/32724 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/67069 (2013.01); H01J 37/32183 (2013.01); H01J 37/32449 (2013.01); H01J 37/32633 (2013.01); H01J 37/32651 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/3347 (2013.01); H01L 21/6833 (2013.01);
Abstract

A substrate processing apparatus includes: a chamber; a substrate support disposed in the chamber; a plasma generator configured to form a plasma in the chamber; and a controller configured to perform a process including: placing a substrate on the substrate support, the substrate including a first film, a second film and a third film, the first film containing a silicon, the second film having a second aperture, the first film being disposed between the second film and the third film; cooling the substrate to −30° C. or less; etching the first film through the second aperture with a plasma formed from a first process gas containing a fluorocarbon gas, to form a first aperture of a tapered shape in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture; and etching the third film through the first aperture.


Find Patent Forward Citations

Hama, Yasutaka. (2024). Substrate processing apparatus and plasma processing apparatus (U.S. Patent No. 11881410). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11881410

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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