The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Sep. 21, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyoungsub Kim, Seoul, KR;
Taejin Park, Yongin-si, KR;
Hoijoon Kim, Daejeon, KR;
Hyeonjin Shin, Suwon-si, KR;
Wonsik Ahn, Bucheon-si, KR;
Mirine Leem, Suwon-si, KR;
Yeonchoo Cho, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do, KR;
Abstract
A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.