The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Dec. 31, 2020
Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Stephen R Burgess, Gwent, GB;

Rhonda Hyndman, Newport, GB;

Amit Rastogi, Newport, GB;

Eduardo Paulo Lima, Gwent, AE;

Clive L Widdicks, Bristol, GB;

Paul Rich, Gloucestershire, GB;

Scott Haymore, Newport, GB;

Daniel Cook, Newport, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/06 (2006.01); C23C 14/35 (2006.01); C23C 14/10 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3458 (2013.01); C23C 14/0617 (2013.01); C23C 14/10 (2013.01); C23C 14/345 (2013.01); C23C 14/3485 (2013.01); C23C 14/35 (2013.01); C23C 14/351 (2013.01); H01J 37/32669 (2013.01); H01J 37/32688 (2013.01); H01J 37/345 (2013.01); H01J 37/3411 (2013.01); H01J 37/3426 (2013.01); H01J 37/3461 (2013.01); H01J 37/3467 (2013.01); H01J 37/3408 (2013.01);
Abstract

A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.


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