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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11871685 B1

PDFFull Text
Date of Patent:
Jan. 09, 2024

Filed:

Jul. 19, 2021

Resistive random-access memory (rram) device and forming method thereof

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wen-Jen Wang, Tainan, TW;

Chun-Hung Cheng, Kaohsiung, TW;

Chuan-Fu Wang, Miaoli County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Marvin Payen

Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8833 (2023.02);
Abstract

A RRAM device includes a bottom electrode, a resistive material layer, a high work function layer, a top electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the high work function layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming said RRAM device is also provided.

Find Patent Forward Citations

Wang, Wen-Jen. (2024). Resistive random-access memory (rram) device and forming method thereof (U.S. Patent No. 11871685). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11871685

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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