The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Aug. 13, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Lianhong Wang, Hefei, CN;

Er-Xuan Ping, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 29/66128 (2013.01); H01L 29/66136 (2013.01);
Abstract

Embodiment relates to the field of semiconductor technologies, and proposes a semiconductor device and a fabrication method thereof. The semiconductor device includes: a substrate, a semiconductor structure, an insulating layer, and a conductive layer. The semiconductor structure is positioned on a side of the substrate and includes a first semiconductor structure and a second semiconductor structure, wherein the first semiconductor structure and the second semiconductor structure form a PN junction. The insulating layer is positioned on a side of the semiconductor structure facing away from the substrate. The conductive layer is positioned on a side of the insulating layer facing away from the substrate, and an orthographic projection of the conductive layer on the substrate at least partially overlaps an orthographic projection of the PN junction on the substrate.


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Wang, Lianhong. (2024). Semiconductor device and fabrication method thereof (U.S. Patent No. 11869984). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11869984

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