The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Mar. 10, 2022
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Hung-Yu Ye, Taichung, TW;

Chung-Yi Lin, New Taipei, TW;

Yun-Ju Pan, Taipei, TW;

Chee-Wee Liu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 23/535 (2006.01); H01L 21/324 (2006.01); H01L 21/8238 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H10B 10/125 (2023.02); H01L 21/3247 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 21/823885 (2013.01); H01L 23/535 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01);
Abstract

A device includes a first horizontal-gate-all-around (HGAA) transistor, a second HGAA transistor, a first vertical-gate-all-around (VGAA) transistor, and a second VGAA transistor. The first HGAA transistor and the second HGAA transistor are adjacent to each other. The first VGAA transistor is over the first HGAA transistor. The second VGAA transistor is over the second HGAA transistor. A top surface of the first VGAA transistor is substantially coplanar with a top surface of the second VGAA transistor.


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