The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Jul. 21, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
H. Jim Fulford, Albany, NY (US);
Anthony Schepis, Albany, NY (US);
Anton J. Devilliers, Clifton Park, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/67 (2006.01); H01L 23/544 (2006.01); H01L 21/027 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67282 (2013.01); H01L 21/0275 (2013.01); H01L 23/528 (2013.01); H01L 23/544 (2013.01); H01L 2223/5444 (2013.01);
Abstract
A method for marking a semiconductor substrate at the die level for providing unique authentication and serialization includes projecting a first pattern of actinic radiation onto a layer of photoresist on the substrate using mask-based photolithography, the first pattern defining semiconductor device structures and projecting a second pattern of actinic radiation onto the layer of photoresist using direct-write projection, the second pattern defining a unique wiring structure having a unique electrical signature.