The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Nov. 17, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/24 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3454 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract
A programming pulse is caused to be applied to a wordline associated with a memory cell of the memory sub-system. A program verify operation is caused to be performed on the memory cell to determine that a measured threshold voltage associated with the memory cell. The measured threshold voltage associated with the memory cell is stored in a sensing node associated with the memory cell. A bitline voltage matching the measured threshold voltage is caused to be applied to a bitline associated with the memory cell to reduce a rate of programming associated with the memory cell.