The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Feb. 28, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Yi-Bo Liao, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Hou-Yu Chen, Hsinchu County, TW;
Yu-Xuan Huang, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device according to the present disclosure includes an anti-punch-through (APT) region over a substrate, a plurality of channel members over the APT region, a gate structure wrapping around each of the plurality of channel members, a source/drain feature adjacent to the gate structure, and a diffusion retardation layer. The source/drain feature is spaced apart from the APT region by the diffusion retardation layer. The source/drain feature is spaced apart from each of the plurality of channel members by the diffusion retardation layer. The diffusion retardation layer is a semiconductor material.