The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jul. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Bo-Feng Young, Taipei, TW;

Chih-Yu Chang, New Taipei, TW;

Sai-Hooi Yeong, Zhubei, TW;

Chi-On Chui, Hsinchu, TW;

Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/467 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 29/0847 (2013.01); H01L 29/24 (2013.01); H01L 29/41783 (2013.01); H01L 29/513 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/467 (2013.01); H01L 29/401 (2013.01); H01L 29/517 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a fin structure that includes a first negative capacitance material, and an isolation structure formed over the substrate. The semiconductor device structure includes a gate structure formed over the fin structure, and a source feature and a drain feature formed over the fin structure. An interface between the fin structure and the source feature is lower than a top surface of the isolation structure.


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