The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jan. 17, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jian-Jou Lian, Tainan, TW;
Chun-Neng Lin, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Chieh-Wei Chen, Taoyuan, TW;
Tzu-Ang Chiang, I-Ian, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/845 (2013.01); H01L 29/7854 (2013.01);
Abstract
A semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. A lower portion of the gate electrode is between the first spacers. An upper portion of the gate electrode is above the first spacers. The second spacers are adjacent the first spacers opposite the gate electrode. The upper portion of the gate electrode is between the second spacers.