The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Aug. 17, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shahaji B. More, Hsinchu, TW;

Chun-Hsiung Tsai, Xinpu Township, Hsinchu County, TW;

Cheng-Yi Peng, Taipei, TW;

Shih-Chieh Chang, Taipei, TW;

Kuo-Feng Yu, Zhudong Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66492 (2013.01); H01L 29/0847 (2013.01); H01L 29/66575 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/7833 (2013.01); H01L 29/7851 (2013.01); H01L 29/41791 (2013.01);
Abstract

Semiconductor structures are provided. The semiconductor structure includes a fin structure protruding from a substrate and a doped region formed in the fin structure. The semiconductor structure further includes a metal gate structure formed across the fin structure and a gate spacer formed on a sidewall of the metal gate structure. The semiconductor structure further includes a source/drain structure formed over the doped region. In addition, the doped region continuously surrounds the source/drain structure and is in direct contact with the gate spacer.


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