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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855168 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Apr. 18, 2022

Semiconductor device and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Hao Wu, Hsinchu, TW;

Zhi-Chang Lin, Zhubei, TW;

Ting-Hung Hsu, MiaoLi, TW;

Kuan-Lun Cheng, Hsin-chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Walter H Swanson

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); B82Y 10/00 (2011.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/8221 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823828 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/1211 (2013.01); H01L 27/1248 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/66469 (2013.01);
Abstract

A semiconductor device includes a first device formed over a substrate. The first device includes a first device formed over a substrate, and the first device includes a first gate stack structure encircling a plurality of first nanostructures. The semiconductor device includes a first epitaxy structure wrapping an end of one of the first nanostructures, and a second device formed over the first device, wherein the second device includes a second gate stack structure encircling a plurality of second nanostructures. The semiconductor device includes a second epitaxy structure wrapping an end of one of the second nanostructures, and the second epitaxy structure is directly above the first epitaxy structure.

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