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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855086 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Mar. 18, 2021

Polysilicon structure including protective layer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Shao Cheng, Hsinchu, TW;

Chui-Ya Peng, Hsinchu, TW;

Kung-Wei Lee, Hsinchu, TW;

Shin-Yeu Tsai, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

John A Bodnar

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 27/06 (2006.01); H01L 27/11 (2006.01); H01L 29/78 (2006.01); H01L 21/8222 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H10B 10/00 (2023.01); H10B 20/20 (2023.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/28247 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/32051 (2013.01); H01L 21/32055 (2013.01); H01L 21/8222 (2013.01); H01L 21/8238 (2013.01); H01L 21/82385 (2013.01); H01L 21/823864 (2013.01); H01L 27/0623 (2013.01); H01L 29/6653 (2013.01); H01L 29/66234 (2013.01); H01L 29/66674 (2013.01); H01L 29/7801 (2013.01); H10B 10/00 (2023.02); H10B 20/20 (2023.02);
Abstract

A semiconductor device includes a substrate, a first polysilicon structure over a first portion of the substrate, and a first spacer on a sidewall of the first polysilicon structure. The first spacer has a concave corner region between an upper portion and a lower portion. The semiconductor device includes a second polysilicon structure over a second portion of the substrate. The semiconductor device includes a second spacer on a sidewall of the second polysilicon structure. The semiconductor device further includes a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, a difference between the first thickness and the second thickness is at most 10% of the second thickness, and the protective layer exposes a top-most portion of a sidewall of the second spacer.

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