Method of forming epitaxial features

Abstract

Semiconductor structures and methods are provided. A method according to the present disclosure includes providing a workpiece that includes a plurality of active regions including channel regions and source/drain regions, and a plurality of dummy gate stacks intersecting the plurality of active regions at the channel regions, the plurality of dummy gate stacks including a device portion and a terminal end portion. The method further includes depositing a gate spacer layer over the workpiece, anisotropically etching the workpiece to recess the source/drain regions and to form a gate spacer from the gate spacer layer, forming a patterned photoresist layer over the workpiece to expose the device portion and the recessed source/drain regions while the terminal end portion is covered, and after the forming of the patterned photoresist layer, epitaxially forming source/drain features over the recessed source/drain regions.