The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jul. 09, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Jian-Sing Li, Hsinchu, TW;
Chi-Yu Lu, Hsinchu, TW;
Hui-Zhong Zhuang, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); G06F 30/392 (2020.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/392 (2020.01); H01L 21/82385 (2013.01); H01L 27/092 (2013.01); H01L 29/42376 (2013.01);
Abstract
A method of fabricating an integrated circuit. The method includes generating two first-type active zones and two second-type active zones, and generating a gate-strip intersecting the two first-type active zones and the two second-type active zones. The method further includes patterning one or more poly cuts intersecting the gate-strip based on a determination of a difference between the poly extension effect of a p-type transistor and the poly extension effect of an n-type transistor.