The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
May. 19, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Joanna Chaw Yane Yin, Hsinchu, TW;
Hua Feng Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76865 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 21/823821 (2013.01); H01L 23/485 (2013.01); H01L 23/535 (2013.01); H01L 23/53266 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 21/28518 (2013.01); H01L 21/76855 (2013.01);
Abstract
Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.