The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Aug. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Mirng-Ji Lii, Sinpu Township, TW;

Chen-Shien Chen, Zhubei, TW;

Lung-Kai Mao, Kaohsiung, TW;

Ming-Da Cheng, Taoyuan, TW;

Wen-Hsiung Lu, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/5226 (2013.01); H01L 23/5383 (2013.01); H01L 24/80 (2013.01); H01L 2224/80345 (2013.01); H01L 2224/80355 (2013.01);
Abstract

A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.


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