The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Jul. 22, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Meng-Han Lin, Hsinchu, TW;
Chia-En Huang, Hsinchu, TW;
Han-Jong Chia, Hsinchu, TW;
Martin Liu, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu, TW;
Yih Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method (of reading a ferroelectric field-effect transistor (FeFET) configured as a 2-bit storage device that stores two bits, wherein the FeFET includes a first source/drain (S/D) terminal, a second S/D terminal, a gate terminal and a ferroelectric layer, a second bit being at a first end of the ferroelectric layer, the first end being proximal to the first S/D terminal) includes reading the second bit including: applying a gate sub-threshold voltage to the gate terminal; applying a read voltage to the second S/D terminal; applying a do-not-disturb voltage to the first S/D terminal; and sensing a first current at the second S/D terminal; and wherein the read voltage is lower than the do-not-disturb voltage.