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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11848240 B1

PDFFull Text
Date of Patent:
Dec. 19, 2023

Filed:

Dec. 07, 2020

Method of manufacturing a semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shu-Uei Jang, Hsinchu, TW;

Chen-Huang Huang, Shuishang Township, TW;

Ryan Chia-Jen Chen, Chiayi, TW;

Shiang-Bau Wang, Pingzchen, TW;

Shu-Yuan Ku, Zhubei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Jay C Chang

Assistant Examiner:

Mikka Liu

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/76224 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.

Find Patent Forward Citations

Jang, Shu-Uei. (2023). Method of manufacturing a semiconductor device (U.S. Patent No. 11848240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11848240

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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