The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Jul. 10, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chieh-Wei Chen, Taoyuan, TW;
Jian-Jou Lian, Tainan, TW;
Tzu-Ang Chiang, I-Ian, TW;
Chun-Neng Lin, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes depositing a first work function layer over a gate dielectric layer, forming a first hard mask layer over the first work function layer, forming a photoresist mask over the first hard mask layer, where forming the photoresist mask includes depositing a bottom anti-reflective coating (BARC) layer over the first hard mask layer, etching a portion of the BARC layer, etching a portion of the first hard mask layer using the BARC layer as a mask, etching a portion of the first work function layer to expose a portion of the gate dielectric layer through the first hard mask layer and the first work function layer, removing the first hard mask layer, and depositing a second work function layer over the first work function layer and over the portion of the gate dielectric layer.