The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
May. 07, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Leonid Dorf, San Jose, CA (US);
Rajinder Dhindsa, Pleasanton, CA (US);
James Rogers, Los Gatos, CA (US);
Daniel Sang Byun, Campbell, CA (US);
Evgeny Kamenetskiy, Santa Clara, CA (US);
Yue Guo, Redwood City, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Olivier Luere, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.