The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Nov. 17, 2021
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1008 (2013.01); H01L 29/42304 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes a lateral bipolar junction transistor including an extrinsic base region and a bilayer dielectric spacer on sidewalls of the extrinsic base region, and a p-n junction positioned under the bilayer dielectric spacer between the extrinsic base region and at least an emitter region.