The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Sep. 29, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H10B 43/20 (2023.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67288 (2013.01); H01L 21/02016 (2013.01); H01L 21/02035 (2013.01); H01L 21/268 (2013.01); H10B 43/20 (2023.02);
Abstract
In certain aspects, a method for controlling wafer stress is disclosed. A semiconductor film is formed on a backside of a wafer. The wafer is deformed by stress associated with a front-side semiconductor structure on a front side of the wafer opposite to the backside of the wafer. A laser application region of the semiconductor film is determined. A laser anneal process is performed in the laser application region of the semiconductor film.