The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Feb. 25, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); F27D 7/06 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01); F27D 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67109 (2013.01); F27D 7/06 (2013.01); H01L 21/6719 (2013.01); H01L 21/67103 (2013.01); H01L 21/67739 (2013.01); H01L 21/68742 (2013.01); F27D 19/00 (2013.01);
Abstract
A side surface unit of a heat treatment space S is formed by a shutter memberincluding an outer shutterand an inner shutter. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member, that is, from a gap dlocated on the level with the wafer W placed on a heat plateof a mounting table. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member, that is, from a gap dpositioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.