The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Aug. 19, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Wei Peng, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Charles Chew-Yuen Young, Hsinchu, TW;

Hui-Zhong Zhuang, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Shun Li Chen, Hsinchu, TW;

Wei-Cheng Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/00 (2020.01); G06F 30/398 (2020.01); H01L 27/02 (2006.01); H01L 27/118 (2006.01); G06F 30/39 (2020.01); G06F 30/394 (2020.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G06F 30/39 (2020.01); G06F 30/394 (2020.01); H01L 27/0207 (2013.01); H01L 27/11807 (2013.01); H01L 2027/11875 (2013.01);
Abstract

An integrated circuit includes a set of gates, a first, second and third conductive structure, and a first, second and third via. The set of gates includes a first, second and third gate. The first, second and third conductive structure extend in the first direction and are located on a second level. The first via couples the first conductive structure and the first gate. The second via couples the second conductive structure and the second gate. The third via couples the third conductive structure and the third gate. The first, second and third via are in a right angle configuration. The first and second gate are separated from each other by a first pitch. The first and third gate are separated from each other by a removed gate portion. The first and second conductive structure are separated from each other in the first direction.


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