The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Jul. 29, 2022
Applicant:

The Research Foundation for the State University of New York, Albany, NY (US);

Inventors:

Douglas Coolbaugh, Albany, NY (US);

Douglas La Tulipe, Albany, NY (US);

Gerald Leake, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01); G02B 6/13 (2006.01); G02B 6/42 (2006.01); H01L 23/00 (2006.01); G02B 6/43 (2006.01); H01L 27/12 (2006.01); H01L 21/18 (2006.01); H01L 21/762 (2006.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
G02B 6/12002 (2013.01); G02B 6/131 (2013.01); G02B 6/4232 (2013.01); G02B 6/43 (2013.01); H01L 21/187 (2013.01); H01L 21/486 (2013.01); H01L 23/49838 (2013.01); H01L 24/92 (2013.01); H01L 27/1266 (2013.01); H01L 31/02002 (2013.01); H01L 31/02016 (2013.01); H01L 31/02327 (2013.01); G02B 6/12 (2013.01); G02B 6/12004 (2013.01); G02B 2006/121 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12138 (2013.01); G02B 2006/12147 (2013.01); G02B 2006/12176 (2013.01); G02B 2006/12178 (2013.01); H01L 21/7624 (2013.01); H01L 21/76224 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/24 (2013.01); H01L 24/80 (2013.01); H01L 24/81 (2013.01); H01L 24/82 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 27/1203 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/09181 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/24105 (2013.01); H01L 2224/24226 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/8203 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/9222 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/1431 (2013.01);
Abstract

There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.


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