The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Dec. 15, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Xusheng Wu, Hsinchu, TW;

Chang-Miao Liu, Hsinchu, TW;

Huiling Shang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01);
Abstract

A semiconductor device and a method of forming the same are provided. A semiconductor device of the present disclosure includes a first fin including a first source/drain region, a second fin including a second source/drain region, a first isolation layer disposed between the first source/drain region and the second source/drain region, and a second isolation layer disposed over the first isolation layer. A first portion of the first isolation layer is disposed on sidewalls of the first source/drain region and a second portion of the first isolation layer is disposed on sidewalls of the second source/drain region. A portion of the second isolation layer is disposed between the first portion and second portion of the first isolation layer.


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