The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Aug. 27, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Li-Wei Chu, Hsinchu, TW;
Wun-Jie Lin, Hsinchu, TW;
Yu-Ti Su, Hsinchu, TW;
Ming-Fu Tsai, Hsinchu, TW;
Jam-Wem Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.