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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11837500 B1

PDFFull Text
Date of Patent:
Dec. 05, 2023

Filed:

Jun. 30, 2022

Selective deposition of metal barrier in damascene processes and the structures formed thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Pang Kuo, Taoyuan, TW;

Ya-Lien Lee, Baoshan Township, TW;

Chieh-Yi Shen, Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Lex H Malsawma

Assistant Examiner:

Eric W Jones

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76844 (2013.01); H01L 21/7681 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01);
Abstract

A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor. An inhibitor film comprising the inhibitor is formed on the conductive feature. The method further includes depositing a conductive barrier layer extending into the opening, performing a treatment to remove the inhibitor film after the conductive barrier layer is deposited, and depositing a conductive material to fill a remaining portion of the opening.

Find Patent Forward Citations

Kuo, Chia-Pang. (2023). Selective deposition of metal barrier in damascene processes and the structures formed thereof (U.S. Patent No. 11837500). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11837500

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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