The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Jan. 29, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Felix yingkit Tsui, Cupertino, CA (US);
Stefan Rusu, Sunnyvale, CA (US);
Chewn-Pu Jou, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A photodetection device and a manufacturing method are provided. The photodetection device includes an absorption structure, a cathode, a charge multiplication region and an anode. The absorption structure is formed in a recess at a surface region of a semiconductor substrate, and configured to receive an incident light. The cathode is formed on a top surface of the absorption structure, and has a first conductive type. The charge multiplication layer is in lateral contact with the absorption structure, and is an intrinsic portion of the semiconductor substrate extending into the semiconductor substrate from a topmost surface of the semiconductor substrate. The anode is in lateral contact with the charge multiplication layer from a side of the charge multiplication region away from the absorption structure, and is a doped region in the semiconductor substrate having a second conductive type complementary to the first conductive type.